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Electron minibands and Wannier-Stark quantization in an In0.15Ga0.85As-GaAs strained-layer superlattice

B. Soucail, N. Dupuis, R. Ferreira, P. Voisin, A. P. Roth, D. Morris, K. Gibb, and C. Lacelle
Phys. Rev. B 41, 8568(R) – Published 15 April 1990
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Abstract

We have investigated the electronic properties of an In0.15Ga0.85As-GaAs strained-layer superlattice using photoluminescence excitation and photocurrent spectroscopies. Flatband spectra show transitions at the center and edge of the Brillouin minizone, and photocurrent spectra at finite bias show, for the first time in this system, the effects of Wannier-Stark quantization. The heavy-hole transitions evidence the importance of the excitonic interaction between spatially separated carriers. The light-hole transitions show a qualitatively different behavior resulting from their weak confinement in the GaAs layers. Our data agree with a numerical calculation of the electro-optical absorption spectra.

  • Received 15 December 1989

DOI:https://doi.org/10.1103/PhysRevB.41.8568

©1990 American Physical Society

Authors & Affiliations

B. Soucail, N. Dupuis, R. Ferreira, and P. Voisin

  • Laboratoire de Physique de la Matière Condensée de l’Ecole Normale Supérieure, 24 rue Lhomond, F-75005 Paris, France

A. P. Roth, D. Morris, K. Gibb, and C. Lacelle

  • Laboratoire des Sciences des Microstructures Conseil National de Recherches, 100 Promenade Sussex, Ottawa, Ontario, Canada K1A 0R6

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Vol. 41, Iss. 12 — 15 April 1990

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