Magnetoelectric effect in conduction-electron spin resonance in zinc-blende semiconductors

Yang-Fang Chen
Phys. Rev. B 40, 1959 – Published 15 July 1989
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Abstract

We propose a new phenomenon in zinc-blende semiconductors, the magnetoelectric effect, which occurs when there exist simultaneously electric-dipole- and magnetic-dipole-induced conduction-electron spin resonance. We point out that this effect can lead to an anomalous dependence of the spin-resonance intensity on the sign of either the dc magnetic field B0 or the wave vector q of the photon. The effect also provides an elegant way of determining the parameter which causes the electric-dipole-induced conduction-electron spin resonance.

  • Received 14 February 1989

DOI:https://doi.org/10.1103/PhysRevB.40.1959

©1989 American Physical Society

Authors & Affiliations

Yang-Fang Chen

  • Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China

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Issue

Vol. 40, Iss. 3 — 15 July 1989

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