In this paper we examine the inelastic scattering of light by interband electronic transitions (interband electronic Raman scattering) in semiconductors and semimetals. A number of general features of the scattering process and the resulting Raman spectrum are examined. We also present detailed calculations of the form and magnitude of the Raman efficiency associated with interband transitions near the $\Gamma$ point of the Brillouin zone in materials with the gray-tin band structure in zero magnetic field.

• Received 2 April 1971

DOI:https://doi.org/10.1103/PhysRevB.4.2429