Stability of group IV-VI semiconductor alloys

L. Salamanca-Young, S. Nahm, M. Wuttig, D. L. Partin, and J. Heremans
Phys. Rev. B 39, 10995 – Published 15 May 1989
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Abstract

We present transmission electron microscopy results on Pb1xEuxTe alloys that show evidence for a compositional instability for x≊0.5 when the alloys are grown on BaF2 substrates. The Pb1xEuxTe alloy becomes stable at room temperature if a buffer layer of PbTe is grown on the BaF2 substrate prior to the growth of the Pb1xEuxTe layer. The stabilization of the Pb1xEuxTe solid solution is the result of the additional energy term due to the strain between the Pb1xEuxTe film and the PbTe buffer layer. The estimated critical temperatures for decomposition of the Pb1xEuxTe alloys with and without the PbTe buffer layer are 0 and 366 K, respectively, in accord with the experimental observations.

  • Received 28 December 1988

DOI:https://doi.org/10.1103/PhysRevB.39.10995

©1989 American Physical Society

Authors & Affiliations

L. Salamanca-Young, S. Nahm, and M. Wuttig

  • Department of Chemical and Nuclear Engineering, University of Maryland, College Park, Maryland 20742

D. L. Partin and J. Heremans

  • General Motors Research Laboratories, Warren, Michigan 48090

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Vol. 39, Iss. 15 — 15 May 1989

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