Structure and bonding in photodiffused amorphous Ag-GeSe2 thin films

A. Fischer-Colbrie, A. Bienenstock, P. H. Fuoss, and Matthew A. Marcus
Phys. Rev. B 38, 12388 – Published 15 December 1988
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Abstract

Grazing-incidence x-ray scattering (GIXS) techniques have been used to study the local and intermediate-range order in photodiffused amorphous Ag-GeSe2 thin films and a variety of Ag-Ge-Se alloys. Using synchrotron-radiation sources, the GIXS technique can be used in conjunction with radial-distribution-function analysis, differential anomalous x-ray scattering, and differential distribution-function analysis to study the structure of very thin amorphous films. With these techniques, we have determined that the local atomic structure of Ag-GeSe2 films satisfies a model where Se-Ag dative bonds are formed, one Se-Ag covalent bond is formed for each Ag atom added (below a critical composition), and Ge-Ge bonds are created as Ag is added. This last result significantly modifies the intermediate-range order in this system.

  • Received 10 August 1988

DOI:https://doi.org/10.1103/PhysRevB.38.12388

©1988 American Physical Society

Authors & Affiliations

A. Fischer-Colbrie and A. Bienenstock

  • Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205

P. H. Fuoss

  • AT&T Bell Laboratories, Crawfords Corner Road, Holmdel, New Jersey 07733-1988

Matthew A. Marcus

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974-2070

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Vol. 38, Iss. 17 — 15 December 1988

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