Theoretical estimation of static charge fluctuation in amorphous silicon

Sándor Kugler, Péter R. Surján, and Gábor Náray-Szabó
Phys. Rev. B 37, 9069 – Published 15 May 1988
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Abstract

A quantum-chemical method has been developed to determine charge fluctuations in finite aperiodic clusters of amorphous silicon. Calculated atomic net charges are in a close linear relationship to bond-angle distortions involving first and second neighbors. Applying this relationship to a continuous-random-network model of 216 silicon atoms proposed by Wooten et al., we obtained 0.021 electron units for the rms deviation from charge neutrality.

  • Received 21 December 1987

DOI:https://doi.org/10.1103/PhysRevB.37.9069

©1988 American Physical Society

Authors & Affiliations

Sándor Kugler

  • Quantum Theory Group, Institute of Physics, Technical University of Budapest, H-1521 Budapest, Hungary

Péter R. Surján and Gábor Náray-Szabó

  • CHINOIN Pharmaceutical and Chemical Works, P.O. Box 110, H-1325 Budapest, Hungary

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Vol. 37, Iss. 15 — 15 May 1988

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