Phys. Rev. B 37, 10244 (1988) - Band-gap tailoring of ZnO by means of heavy Al doping

Band-gap tailoring of ZnO by means of heavy Al doping

B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist

Phys. Rev. B 37, 10244 – Published 15 June 1988

Abstract

Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

Received 30 November 1987

DOI:https://doi.org/10.1103/PhysRevB.37.10244

©1988 American Physical Society

Authors & Affiliations

B. E. Sernelius

Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Department of Physics, University of Tennessee, Knoxville, Tennessee 37996

Theoretical Physics Group, Department of Physics and Measurement Technology, Linköping University, S-581–83 Linköping, Sweden

Z.-C. Jin, I. Hamberg, and C. G. Granqvist

Physics Department, Chalmers University of Technology, S-41296 Gothenburg, Sweden

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Vol. 37, Iss. 17 — 15 June 1988

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