Abstract
Infrared Raman spectra of the 78-meV double acceptor in GaAs are reported. These spectra reveal electronic excitations within the threefold-split 1 ground-state multiplet of the neutral double acceptor. Based on Raman selection rules the energy-level diagram has been constructed for the ground state with the level lowest in energy and the and levels split apart by 11.8 and 14.9 meV, respectively. The overall ground-state splitting of 14.9 meV is surprisingly large compared to the ionization energy of 78 meV. The assignment for the lowest ground-state level is confirmed by the selection rules measured for the Raman transitions between the 1 ground state and the 1s2s excited state.
- Received 30 March 1987
DOI:https://doi.org/10.1103/PhysRevB.36.6688
©1987 American Physical Society