Benzene adsorption on low-temperature silicon: A synchrotron-radiation photoemission study of valence and core states

M. N. Piancastelli, M. K. Kelly, Y. Chang, J. T. McKinley, and G. Margaritondo
Phys. Rev. B 35, 9218 – Published 15 June 1987
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Abstract

We present a synchrotron-radiation photoemission study of the different adsorption states for benzene on cleaved Si(111) substrates at room temperature and low temperature. The results provide information on the chemisorption or physisorption nature of the adsorption states. In particular, the data suggest that physisorption and chemisorption states coexist at low temperature and low coverage.

  • Received 17 November 1986

DOI:https://doi.org/10.1103/PhysRevB.35.9218

©1987 American Physical Society

Authors & Affiliations

M. N. Piancastelli

  • Department of Chemical Sciences and Technologies, II University of Rome, 00173 Rome, Italy

M. K. Kelly, Y. Chang, J. T. McKinley, and G. Margaritondo

  • Department of Physics and Synchrotron Radiation Center, University of Wisconsin, Madison, Wisconsin 53706

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Vol. 35, Iss. 17 — 15 June 1987

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