Abstract
We present the results of photoemission studies of the chemisorption of Si on polycrystalline Al. We find an interface width of a very few angstroms. The substrate ordering, which determines the interface width when Al is deposited on Si, does not play a role in this case. The relevance of the results to the problem of the Schottky-barrier formation is discussed.
- Received 12 March 1986
DOI:https://doi.org/10.1103/PhysRevB.34.967
©1986 American Physical Society
