Electronic structure and positron states at vacancies in Si and GaAs

M. J. Puska, O. Jepsen, O. Gunnarsson, and R. M. Nieminen
Phys. Rev. B 34, 2695 – Published 15 August 1986
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Abstract

The self-consistent electron structures of the perfect Si and GaAs lattices are calculated by the linear-muffin-tin-orbital (LMTO) band-structure method within the atomic-sphere approximation (ASA). Monovacancies in different charge states are treated by the self-consistent LMTO-ASA Green’s-function method. The corresponding positron states are determined by the same methods and positron annihilation characteristics are calculated. The results are compared with recent experiments.

  • Received 16 January 1986

DOI:https://doi.org/10.1103/PhysRevB.34.2695

©1986 American Physical Society

Authors & Affiliations

M. J. Puska, O. Jepsen, and O. Gunnarsson

  • Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany

R. M. Nieminen

  • Department of Physics, University of Jyväskylä, SF-40100 Jyväskylä, Finland

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Issue

Vol. 34, Iss. 4 — 15 August 1986

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