We present a group-theoretical study of triple acceptors in group-IV semiconductors under uniaxial stress, based on a self-consistent-field model. The ground state, constructed from three single-hole ${\Gamma }_8$ states, is itself a ${\Gamma }_8$ state, whereas the excited states are more complex. The energy splittings of the various states and the relative intensities of the stress-induced components of the optical transitions between those states are determined. Only effects linear in stress are considered.

• Received 22 August 1985

DOI:https://doi.org/10.1103/PhysRevB.33.1275