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Epitaxial growth and superconducting-transition-temperature anomalies of Mo/V superlattices

M. G. Karkut, D. Ariosa, J.-M. Triscone, and O/. Fischer
Phys. Rev. B 32, 4800(R) – Published 1 October 1985
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Abstract

We have epitaxially grown by magnetron sputtering Mo/V superlattices in two different crystalline orientations, (001) and (110), which are determined by our choice of substrate. We have measured Tc as a function of chemical modulation wavelength Λ and find that the behavior cannot be explained by application of proximity-effect theories. We also observe an orientational dependence of Tc which can be understood by effectively rescaling Λ into the number of atomic planes of vanadium in one multilayer period.

  • Received 29 July 1985

DOI:https://doi.org/10.1103/PhysRevB.32.4800

©1985 American Physical Society

Authors & Affiliations

M. G. Karkut, D. Ariosa, J.-M. Triscone, and O/. Fischer

  • Université de Genève, 24 Quai Ernest Ansermet, CH 1211 Genève 4, Switzerland

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Vol. 32, Iss. 7 — 1 October 1985

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