Variable-range-hopping conductivity in compensated n-type GaAs

M. Benzaquen and D. Walsh
Phys. Rev. B 30, 7287 – Published 15 December 1984
PDFExport Citation

Abstract

The low-T conductivity of lightly doped, compensated, crystalline n-type GaAs epilayers is described by σ=σ0exp[(T0T)s]+σcexp[(EcEF)kBT]. s is found to vary from 0.2 to 0.27, implying that the Coulomb gap in the density of impurity states plays at best a minor role in the hopping conductivity (T>1 K) for ND5×1015 cm3 and for compensations from 30% to 60%.

  • Received 14 September 1984

DOI:https://doi.org/10.1103/PhysRevB.30.7287

©1984 American Physical Society

Authors & Affiliations

M. Benzaquen and D. Walsh

  • Physics Department, McGill University, 3600 University Street, Montreal, Quebec, Canada H3A-2T8

References (Subscription Required)

Click to Expand
Issue

Vol. 30, Iss. 12 — 15 December 1984

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×