• Rapid Communication

Electronically induced trapping of hydrogen by impurities in niobium

M. Manninen, M. J. Puska, R. M. Nieminen, and P. Jena
Phys. Rev. B 30, 1065(R) – Published 15 July 1984
PDFExport Citation

Abstract

The binding energies of hydrogen and its isotopes to substitutional impurities Ti, Cr, and V in niobium have been calculated. The hydrogen-metal interaction is based on the effective-medium theory. The wave mechanics of the hydrogenic interstitials are explicity dealt with, and the lattice distortion created by the hydrogen is incorporated through the method of lattice statics. The difference in the electronic structure between impurity and host atoms is shown to be largely responsible for the binding of hydrogen to the impurities. The results are in agreement with recent inelastic neutron scattering experiments.

  • Received 16 January 1984

DOI:https://doi.org/10.1103/PhysRevB.30.1065

©1984 American Physical Society

Authors & Affiliations

M. Manninen

  • Research Institute for Theoretical Physics, University of Helsinki, 00170 Helsinki, Finland

M. J. Puska

  • Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland

R. M. Nieminen

  • Department of Physics, University of Jyväskylä, 40100 Jyväskylä, Finland

P. Jena

  • Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284

References (Subscription Required)

Click to Expand
Issue

Vol. 30, Iss. 2 — 15 July 1984

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×