Planar Hall effect and anisotropic magnetoresistance in thin films of the chiral antiferromagnet Mn3Sn

Vinay Sharma, Rajeev Nepal, and Ramesh C. Budhani
Phys. Rev. B 108, 144435 – Published 26 October 2023
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Abstract

Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electromagnetic responses including as a large anomalous Hall effect (AHE) and spin Hall conductivity. The Mn3Sn and Mn3Ge compounds, where the Mn spins arrange in a kagome lattice, are examples of this class of materials. Here, we report on measurements of magnetotransport in c-axis textured Mn3Sn thin films grown on the [111] plane of single-crystal MgO by dc magnetron sputtering. At room temperature, these films display a weak uncompensated magnetic moment of 0.12μB/f.u. in the basal plane and a longitudinal resistivity (ρxx) 3.8μΩm, which matches well with the bulk value. A residual resistivity ratio [ρxx(300K)/ρxx(2K)] of 3.92 further indicates the high quality of the films. While at 300 K a weak AHE together with field-linear Hall resistivity (ρxy) is observed in magnetic fields (H) applied perpendicular to the kagome planes, the temperature (T) dependence of ρxy shows prominent signatures of three magnetic phases in the temperature regime of 2–300 K. The ρxy also derives a nontrivial topological contribution (ρTHE1nΩm) in the spin-glass phase which appears at T100 K. The origin of the ρTHE is attributed to spin textures which may appear in a frustrated chiral spin order. Our measurements of anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) over a wide HT phase space reveal the hitherto unseen effects in the three magnetic phases of Mn3Sn. While the AMR and PHE are negative in the inverse triangular spin phase (250KTTN), the helical phase (100T250K) is devoid of anisotropic in-plane resistivity, and the spin-glass phase shows a sign reversal of AMR with the increasing magnetic field. The origin of this sign change in AMR/PHE is attributed to the emergence of topologically protected spin textures like skyrmions where the fictitious effective magnetic field is estimated to be 4.4 Tesla.

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  • Received 13 May 2023
  • Revised 15 September 2023
  • Accepted 13 October 2023

DOI:https://doi.org/10.1103/PhysRevB.108.144435

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Vinay Sharma, Rajeev Nepal, and Ramesh C. Budhani*

  • Department of Physics, Morgan State University, Baltimore, Maryland 21251, USA

  • *Ramesh.budhani@morgan.edu

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Vol. 108, Iss. 14 — 1 October 2023

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