Magnetoresistance of the double-atomic-layer $\text{rect-}\sqrt{7}\times \sqrt{3}\text{-In}/\mathrm{Si}\left(111\right)$ phase was measured in situ using the four-point-probe technique in the temperature range from 2.5 to 33 K and magnetic fields from $-8$ to $+8$ T. The $\text{rect-}\sqrt{7}\times \sqrt{3}\text{-In}/\mathrm{Si}\left(111\right)$ was found to demonstrate a classical quadratic behavior of magnetoresistance at fields lower than $\sim 0.2$ T, and a large positive linear magnetoresistance at fields up to 8 T in the low-temperature range of up to $\sim 10$ K. In contrast, the results obtained on the parent single- and double-atomic In layers formed on the ${\mathrm{NiSi}}_2/\text{Si}\left(111\right)$ substrate show much lower values of magnetoresistance. In view of the density functional theory calculation results, which reveal the presence of tiny Fermi pockets in the $\text{rect-}\sqrt{7}\times \sqrt{3}\text{-In/Si}\left(111\right)$ electronic band structure, we attribute the observed large linear magnetoresistance at the low-temperature range to a quantum mechanical origin.

• Received 9 January 2023
• Accepted 5 May 2023

DOI:https://doi.org/10.1103/PhysRevB.107.195305