Flipping of antiferromagnetic to superconducting states in pressurized quasi-one-dimensional manganese-based compounds

Sijin Long, Long Chen, Yuxin Wang, Ying Zhou, Shu Cai, Jing Guo, Yazhou Zhou, Ke Yang, Sheng Jiang, Qi Wu, Gang Wang, Jiangping Hu, and Liling Sun
Phys. Rev. B 106, 214515 – Published 16 December 2022
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Abstract

One of the universal features of unconventional superconductors is that the superconducting (SC) state is developed in the proximity of an antiferromagnetic (AFM) state. Unified understanding the interplay between these two states in different superconducting systems is one of the key issues to uncover the underlying physics of unconventional SC mechanism. Here, we report a pressure-induced superconductivity in the quasi-one-dimensional CsMn6Bi5 compound that bears an AFM state at ambient pressure. The SC state appears at the critical pressure (Pc) of 12 GPa and stabilizes up to 27 GPa. The high-pressure x-ray-diffraction measurements on CsMn6Bi5 indicate that no structural phase transition occurs at the Pc, indicating that the AFM-SC transition is electronic in origin. By comparing the previous results of AMn6Bi5 (A=K, Rb), we identify that all members of the family possess the genetic flipping behavior of AFM-SC states at almost the same Pc, though their ambient-pressure unit-cell volumes vary quite differently. Our theoretical calculations suggest that the pressure-induced changes of partial density of state contributed by the dyz and dxz/dz2 orbital electrons near Fermi energy may be associated with the origin of the flipping. These results provide a diverse picture of the connection between the AFM and SC states in the 3d transition-metal compounds.

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  • Received 30 July 2022
  • Revised 26 November 2022
  • Accepted 6 December 2022

DOI:https://doi.org/10.1103/PhysRevB.106.214515

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sijin Long1,2,*, Long Chen1,2,*, Yuxin Wang1,2,*, Ying Zhou1,2,*, Shu Cai1, Jing Guo1,4, Yazhou Zhou1, Ke Yang3, Sheng Jiang3, Qi Wu1, Gang Wang1,2,4,†, Jiangping Hu1,2,‡, and Liling Sun1,2,4,§

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Shanghai Synchrotron Radiation Facilities, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
  • 4Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

  • *These authors contributed equally to this work.
  • gangwang@iphy.ac.cn
  • jphu@iphy.ac.cn
  • §llsun@iphy.ac.cn

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Issue

Vol. 106, Iss. 21 — 1 December 2022

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