Spin rectification effects in ferromagnetic metal microstrips induced by anisotropic magnetoresistance, planar Hall effect, and anomalous Hall effect

Kang He, Jun Cheng, Man Yang, Liang Sun, Wei Sun, Subhankar Bedanta, Antonio Azevedo, Bingfeng Miao, and Haifeng Ding
Phys. Rev. B 106, 104407 – Published 8 September 2022

Abstract

Spin rectification effect (SRE) is an important electrical detection tool employed to probe magnetic dynamics and spin-orbit torques, and it is also closely related to spin pumping measurements. The SRE has multiple physical origins, and the entanglement among them makes it difficult to derive quantitative information. Herein, we present a systematic study of the SRE in Co40Fe40B20 and Ni microstrips with out-of-plane-dominant microwave magnetic field excitation. The SREs from different physical mechanisms can be quantitatively decomposed via a symmetry consideration. The validity of the method is further supported by angular-dependent analyses. We observe both the anisotropic magnetoresistance induced SRE from the longitudinal induction current, and the planar Hall effect as well as the anomalous Hall effect induced SREs from the transverse induction current. Our work provides a comprehensive understanding of the SREs in ferromagnetic metal microstrips, and it is beneficial for quantitative analyses in microwave-related studies in spintronics.

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  • Received 7 July 2022
  • Revised 22 August 2022
  • Accepted 24 August 2022

DOI:https://doi.org/10.1103/PhysRevB.106.104407

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kang He1, Jun Cheng1, Man Yang1, Liang Sun1,2, Wei Sun3, Subhankar Bedanta4, Antonio Azevedo5, Bingfeng Miao1,2,*, and Haifeng Ding1,2

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
  • 2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
  • 3BGRIMM Technology Group Co. LTD, Beijing 100160, People's Republic of China
  • 4Laboratory for Nanomagnetism and Magnetic Materials (LNMM), School of Physical Sciences, National Institute of Science Education and Research (NISER), An OCC of Homi Bhabha National Institute (HBNI), Jatni-752050, India
  • 5Departamento de Física, Universidade Federal de Pernambuco, Recife, Pernambuco 50670-901, Brazil

  • *Corresponding author: bfmiao@nju.edu.cn

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Issue

Vol. 106, Iss. 10 — 1 September 2022

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