Abstract
We combined photoelectron spectroscopy with first-principles calculations to investigate electronic properties of doped with Ni impurities. High-quality epitaxial pristine and : films with and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Kohn-Rostoker Green's function method, predict the formation of localized -impurity bands in the band gap of close to the valence band maxima. The measured valence bands at the resonance Ni excitation and band dispersion confirm these findings.
- Received 11 March 2021
- Revised 6 September 2021
- Accepted 4 October 2021
DOI:https://doi.org/10.1103/PhysRevB.104.165129
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