Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-)electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage ($I$-$U$) characteristics, recorded at variable temperatures from ${\mathrm{Li}\mathrm{Nb}\mathrm{O}}_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us to directly quantify the physical parameters relevant to the two mechanisms (a) and (b) mentioned above. These are, for example, the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode-DW junction. Furthermore, the activation energies needed to initiate the thermally activated electronic transport along the DWs can be extracted. In addition, we show that electronic transport along LNO DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode, double-resistor equivalent-circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by successfully fitting the $I$-$U$ curves of not only $z$-cut LNO bulk DWs, but equally of $z$-cut thin-film LNO DWs, and of $x$-cut thin-film DWs as reported in literature.

• Received 19 July 2023
• Revised 18 November 2023
• Accepted 10 January 2024

DOI:https://doi.org/10.1103/PhysRevApplied.21.024007