Large Tunable Perpendicular Magnetic Anisotropy in Ultrathin Co-Based Ferromagnetic Films Induced by Antiferromagnetic δMn

R.K. Han, L. Liu, H.L. Sun, H.R. Qin, X.P. Zhao, D. Pan, D.H. Wei, and J.H. Zhao
Phys. Rev. Applied 19, 024033 – Published 13 February 2023

Abstract

We report on the observation of large and tunable perpendicular magnetic anisotropy (PMA) in Co-based ferromagnetic (FM) films induced by an antiferromagnetic (AFM) δMn layer. The perpendicular anisotropic energy of the bilayers can be manipulated by varying the thickness of the δMn layer and the maximum reaches 2.41 × 107 erg/cm3. The coercivity of bilayers is also effectively regulated over a broad range from 0.02 to 7.09 T. We demonstrate that this large PMA originates from strong interfacial exchange coupling and the AFM anisotropic energy. In addition, the antisymmetric longitudinal magnetoresistance occurs in the bilayers in the absence of asymmetric geometry or magnetic field. These results enrich our understanding of AFM-induced large PMA in an AFM/FM bilayer system and provide a promising bilayer structure for exploring high-density magnetic memory devices.

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  • Received 15 September 2022
  • Revised 22 November 2022
  • Accepted 12 January 2023

DOI:https://doi.org/10.1103/PhysRevApplied.19.024033

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

R.K. Han1,2, L. Liu1,2, H.L. Sun1,2, H.R. Qin1,2, X.P. Zhao3,*, D. Pan1,2, D.H. Wei1,2, and J.H. Zhao1,2,†

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China

  • *zhaoxupeng@dgut.edu.cn
  • jhzhao@red.semi.ac.cn

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Vol. 19, Iss. 2 — February 2023

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