Abstract
We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a multilayer prepared using a mass-production-compatible magnetron sputtering system. The multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy, and a uniaxial magnetic anisotropy constant as large as is achieved by optimizing the layer thickness as well as the annealing temperature. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of alloy for magnetic random access memory devices.
- Received 3 November 2022
- Revised 13 January 2023
- Accepted 17 January 2023
DOI:https://doi.org/10.1103/PhysRevApplied.19.024020
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