Inhibition of Skyrmion Hall Effect by a Stripe Domain Wall

Sheng Yang, Kai Wu, Yuelei Zhao, Xue Liang, Jing Xia, Yuqing Zhou, Xiangjun Xing, and Yan Zhou
Phys. Rev. Applied 18, 024030 – Published 10 August 2022

Abstract

Magnetic skyrmions are topologically protected particlelike spin textures initially discovered in chiral magnetic materials. When driven by an electric current, magnetic skyrmions move at a certain angle (i.e., skyrmion Hall angle) with respect to the driving current due to the Magnus force, giving rise to the so-called skyrmion Hall effect (SHE). The SHE often leads to skyrmion annihilation at the sample edge, which is detrimental for practical applications. In this work, we study, experimentally and through micromagnetic simulations, the current-driven dynamics of skyrmion bubbles (SBs) in Pt/Co/Ru multilayer stacks. It is observed that, under certain circumstances, a long stripe domain will form and align along the sample edge, which separates the skyrmion bubbles from the edge and avoids their annihilation at the edge. Furthermore, the velocity of the skyrmion bubbles can be increased by the stripe domain wall (DW) through the DW-SB interaction, as predicted in our early theory. Our results deepen our understanding of skyrmion dynamics and pave the way to the realization of highly efficient information processing and computing devices based on ultrafast skyrmion motion.

  • Figure
  • Received 27 December 2021
  • Revised 27 April 2022
  • Accepted 24 June 2022

DOI:https://doi.org/10.1103/PhysRevApplied.18.024030

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sheng Yang1,‡, Kai Wu1,‡, Yuelei Zhao1,‡, Xue Liang1, Jing Xia2, Yuqing Zhou1, Xiangjun Xing3,*, and Yan Zhou1,†

  • 1School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China
  • 2College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
  • 3School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

  • *xjxing@gdut.edu.cn
  • zhouyan@cuhk.edu.cn
  • S. Yang, K. Wu, and Y. Zhao contributed equally to this work.

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Vol. 18, Iss. 2 — August 2022

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