Silicon Nitride Metalenses for Close-to-One Numerical Aperture and Wide-Angle Visible Imaging

Zhi-Bin Fan, Zeng-Kai Shao, Ming-Yuan Xie, Xiao-Ning Pang, Wen-Sheng Ruan, Fu-Li Zhao, Yu-Jie Chen, Si-Yuan Yu, and Jian-Wen Dong
Phys. Rev. Applied 10, 014005 – Published 10 July 2018
PDFHTMLExport Citation

Abstract

Silicon nitride (SiN) is one of the emerging semiconductor materials that are used in both linear and nonlinear all-optical integrated devices. Its excellent dielectric properties, high material stability, and dispersion controllability are attractive to on-chip optical communications, optical signal processing, and even imaging devices. However, a large-aperture SiN metalens with high numerical aperture (NA) is limited by the low refractive index and nanofabrication technologies, particular in the visible spectrum. Here, we experimentally realize the visible-spectrum SiN divergent metalenses by fabricating the 695-nm-thick hexagonal arrays with a minimum space of 42 nm between adjacent nanopillars. A micro-size divergent metalens with NA0.98 and subwavelength resolution enables objects to be shrunk as small as a single-mode fiber core. Another centimeter-size SiN divergent metalens with over half a billion nanopillars, made by using the mature CMOS-compatible fabrication process, exhibits high-quality wide-angle imaging. Our findings may open a new door for the miniaturization of optical lenses in the fields of optical fibers, microendoscopes, and smart phones, as well as the applications in all-sky telescopes, large-angle beam shaping, and near-eye imaging.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 5 February 2018
  • Revised 11 May 2018

DOI:https://doi.org/10.1103/PhysRevApplied.10.014005

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Authors & Affiliations

Zhi-Bin Fan1,2, Zeng-Kai Shao1,3, Ming-Yuan Xie1,2, Xiao-Ning Pang1,2, Wen-Sheng Ruan1,2, Fu-Li Zhao1,2, Yu-Jie Chen1,3,*, Si-Yuan Yu1,3,4, and Jian-Wen Dong1,2,†

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
  • 2School of Physics, Sun Yat-sen University, Guangzhou 510275, China
  • 3School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
  • 4Photonics Group, Merchant Venturers School of Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom

  • *chenyj69@mail.sysu.edu.cn
  • dongjwen@mail.sysu.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 10, Iss. 1 — July 2018

Subject Areas
Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Applied

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×