We report a measurement of the $A^2\Sigma (v^{\prime }=0)$ radiative lifetime in silicon monofluoride. In this experiment, SiF radicals were produced by the microwave discharge of Si${\mathrm{F}}_4$. The ground-state SiF molecules were then excited to the $A^2\Sigma (v^{\prime }=0)$ state by a dye-laser pulse. The resultant fluorescence was recorded and its decay rate measured. The measured lifetime was 0.23 ± 0.02 μsec and was independent of Si${\mathrm{F}}_4$ pressure in the range 0.05 to 1.0 Torr.

• Received 5 April 1976

DOI:https://doi.org/10.1103/PhysRevA.14.1146