Luminescence Associated with Shallow Acceptor Centers in ZnTe

B. L. CROWDER and G. D. PETTIT
Phys. Rev. 178, 1235 – Published 15 February 1969
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Abstract

The luminescence centers in ZnTe(Li) and ZnTe(P) have been studied from 2 to 300°K, using photoexcitation and electron beam excitation. As-grown crystals of ZnTe(P) and ZnTe(Li) of comparable electrical properties exhibit similar luminescence spectra. An emission series starting at 2.33 eV (2°K) present in both materials can be attributed to transitions from the conduction band to the un-ionized acceptor level. The response of ZnTe(Li) and ZnTe(P) to thermal treatments is different. Li can be removed from ZnTe(Li) by low-temperature (250°C) firings for extended periods of time (8 days), and the associated emission peaks markedly diminish in intensity. The emission of ZnTe(P) is stable under this treatment. High-temperature, short-term firings (850°C, 2 h) under maximum Zn overpressure produce different changes in the emission spectra and in the electrical properties of ZnTe(P) and ZnTe(Li). ZnTe(Li,Al) crystals exhibit a luminescence spectrum which indicates that interaction between Li and Al occurs.

  • Received 2 October 1968

DOI:https://doi.org/10.1103/PhysRev.178.1235

©1969 American Physical Society

Authors & Affiliations

B. L. CROWDER and G. D. PETTIT

  • IBM Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 178, Iss. 3 — February 1969

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