Abstract
The effect of a constant external electric field on the transverse dielectric constant of a semiconductor is calculated. The field produces a sharp decrease in the dielectric constant close to the threshold for an interband transition. Above the edge, the behavior is oscillatory. Numerical results have been obtained for gallium arsenide.
- Received 8 September 1965
DOI:https://doi.org/10.1103/PhysRev.143.564
©1966 American Physical Society