The valence band structure in silicon single crystals subjected to an external uniaxial stress is investigated. The cyclotron resonance line for holes in such crystals is predicted to display a significant shift with increasing stress, if the split band populated with holes is associated with the quantum number $M_J=\pm \frac{1}{2}$. This strain-induced shift is characterized by the following properties: (a) Its magnitude is of the order of 10% of the frequency for strains of the order of 2×${10}^{-3\mathrm{}}$; (b) it is anisotropic with respect to the relative orientation of the external magnetic field to that of the stress; (c) it must be absent if the band populated with holes is associated with the quantum number $M_J=\pm \frac{3}{2}$. These properties in conjunction with the experimentally determined shifts, presented in the paper by Hensel and Feher, lead to a unique assignment of the band parameters which had been left ambiguous by previous experiments. A discussion of the line shape of hole resonance in a deformed crystal is also presented.

• Received 13 September 1962

DOI:https://doi.org/10.1103/PhysRev.129.1029