Synthetic Three-Dimensional Z×Z2 Topological Insulator in an Elastic Metacrystal

Wei Wang, Ze-Guo Chen, and Guancong Ma
Phys. Rev. Lett. 127, 214302 – Published 17 November 2021
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Abstract

We report a three-dimensional (3D) topological insulator (TI) formed by stacking identical layers of Chern insulators in a hybrid real-synthetic space. By introducing staggered interlayer hopping that respects mirror symmetry, the bulk bands possess an additional Z2 topological invariant along the stacking dimension, which, together with the nontrivial Chern numbers, endows the system with a Z×Z2 topology. A 4-tuple topological index characterizes the system’s bulk bands. Consequently, two distinct types of topological surface modes (TSMs) are found localized on different surfaces. Type-I TSMs are gapless and are protected by Chern numbers, whereas type-II gapped TSMs are protected by Z2 bulk polarization in the stacking direction. Remarkably, each type-II TSM band is also topologically nontrivial, giving rise to second-order topological hinge modes (THMs). Both types of TSMs and the THMs are experimentally observed in an elastic metacrystal.

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  • Received 20 April 2021
  • Revised 21 July 2021
  • Accepted 12 October 2021

DOI:https://doi.org/10.1103/PhysRevLett.127.214302

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Nonlinear DynamicsCondensed Matter, Materials & Applied PhysicsGeneral Physics

Authors & Affiliations

Wei Wang, Ze-Guo Chen, and Guancong Ma*

  • Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China

  • *phgcma@hkbu.edu.hk

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Issue

Vol. 127, Iss. 21 — 19 November 2021

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