Transient luminescence of dense InAs/GaAs quantum dot arrays

J. W. Tomm, T. Elsaesser, Yu. I. Mazur, H. Kissel, G. G. Tarasov, Z. Ya. Zhuchenko, and W. T. Masselink
Phys. Rev. B 67, 045326 – Published 31 January 2003
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Abstract

Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power from 109 to 1013 photons/(pulse×cm2). Carrier transfer involves transitions from the ground state of small QDs into lower lying states of larger QDs, a relaxation channel that saturates at high excitation densities. The transition from saturation of the interdot carrier transfer to the unsaturated regime is identified by analyzing the temporal shape of the luminescence signal for decreasing excitation densities. The rate equation model is proposed to account the temporal evolution of photoluminescence in dense QD systems. Numerical simulations of the carrier transfer and relaxation including the interdot coupling are in good agreement with the experimental results.

  • Received 6 July 2001

DOI:https://doi.org/10.1103/PhysRevB.67.045326

©2003 American Physical Society

Authors & Affiliations

J. W. Tomm* and T. Elsaesser

  • Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany

Yu. I. Mazur

  • Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

H. Kissel

  • Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany

G. G. Tarasov, Z. Ya. Zhuchenko, and W. T. Masselink

  • Department of Physics, Humboldt-Universität zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany

  • *Electronic address: tomm@mbi-berlin.de

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Vol. 67, Iss. 4 — 15 January 2003

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