Figure 1

Schematic band structure of bilayer graphene under a dc bias, showing the sombrero structure in the bands and the relative positions of the four bands.Reuse & Permissions

Figure 2

Valley pair qubit consisting of laterally coupled QDs of comparable sizes lying along the $x$ axis in $AB$-stacked BLG. Here $V_{\Delta }$, $V_L$, $V_R$, and $V_C$ are electrical gates, which may be arranged in a mirror-symmetric fashion as suggested here (only those above the graphene layers are explicitly shown). dc biases applied to these gates open energy gaps in the bilayer system and define the QDs. ac biases applied to $V_L/V_R$ generate $R_x$. The $V_C$ controls the interdot tunneling $t$ (or the exchange coupling $J$) and hence $R_z$.Reuse & Permissions

Figure 3

(a) Schematic plot of the valley FET in $AB$-stacked BLG, with AGNR source and drain and a graphene QW channel (aligned in the armchair direction) subject to the control of a side gate bias. In order to define the QW, the side gates and/or vertical gates (such as $V_{\Delta }$ in Fig. 2, but not shown here) can be arranged in a mirror-symmetric fashion, as in Fig. 2, with dc biases applied upon them. Electron states in the various regions are also shown. (b) Under the gate bias, energy subbands in the channel are valley split due to the GVOI, giving a wave-vector difference $k_{+}-k_{-}$ between the states of τ = $\pm$.Reuse & Permissions