Nonadiabatic spin-transfer torque in (Ga,Mn)As with perpendicular anisotropy

J.-P. Adam, N. Vernier, J. Ferré, A. Thiaville, V. Jeudy, A. Lemaître, L. Thevenard, and G. Faini
Phys. Rev. B 80, 193204 – Published 17 November 2009

Abstract

Current-induced magnetic domain wall motion has been investigated in microtracks made from a ferromagnetic semiconductor (Ga,Mn)As thin film with perpendicular anisotropy. In order to reveal the nature of this motion, small fields were additionally applied. The results demonstrate that, when driven by a low current density, the domain walls move under weak fields in a steady-state regime, ruling out models based on spin precession of the domain wall magnetization. The interpretation of these results requires a nonadiabatic contribution in the spin transfer, whose value is estimated and compared to recent theoretical calculations. This highlights the role of spin-orbit interaction in the carrier band on spin-transfer torque in continuous magnetic structures.

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  • Received 12 October 2009

DOI:https://doi.org/10.1103/PhysRevB.80.193204

©2009 American Physical Society

Authors & Affiliations

J.-P. Adam1,2, N. Vernier1,3, J. Ferré1, A. Thiaville1, V. Jeudy1,4, A. Lemaître5, L. Thevenard5,*, and G. Faini5

  • 1Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, 91405 Orsay, France
  • 2GEMAC, Université Versailles Saint-Quentin, CNRS, 78035 Versailles, France
  • 3Institut d’Electronique Fondamentale, Université Paris-Sud, CNRS, 91405 Orsay, France
  • 4Université Cergy-Pontoise, 95000 Cergy-Pontoise, France
  • 5Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France

  • *Present address: Institut des Nanosciences de Paris, Université Paris 6, CNRS, France.

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Issue

Vol. 80, Iss. 19 — 15 November 2009

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