Electric-Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes

Yung-Fu Chen and M. S. Fuhrer
Phys. Rev. Lett. 95, 236803 – Published 30 November 2005

Abstract

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25μA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2×107cm/s.

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  • Received 29 June 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.236803

©2005 American Physical Society

Authors & Affiliations

Yung-Fu Chen and M. S. Fuhrer

  • Department of Physics and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742-4111, USA

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Issue

Vol. 95, Iss. 23 — 2 December 2005

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