Growth of the room temperature Au/Si(111)-7×7 interface

J.-J. Yeh, J. Hwang, K. Bertness, D. J. Friedman, R. Cao, and I. Lindau
Phys. Rev. Lett. 70, 3768 – Published 14 June 1993
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Abstract

Synchrotron radiation photoemission spectroscopy suggests that the room temperature grown Au/Si(111) interface is an abrupt interface with the contact made by metallic Au and bulk Si. Si 2p core level spectra show no sign of an interface component, but only the surface reacted and bulk Si components during the growth of the interface. A surface Au-Si alloy film is first formed for Au coverages below 3 monolayers. The alloy is then stabilized into an Au3Si-like film and detached from the Si substrate when metallic Au starts nucleation in between.

  • Received 12 January 1993

DOI:https://doi.org/10.1103/PhysRevLett.70.3768

©1993 American Physical Society

Authors & Affiliations

J.-J. Yeh, J. Hwang, K. Bertness, D. J. Friedman, R. Cao, and I. Lindau

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
  • Stanford Electronics Laboratories, Stanford, California 94305
  • MAX-Laboratory, Lund University, Box 118, S-22100 Lund, Sweden

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Vol. 70, Iss. 24 — 14 June 1993

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