Pressure and Temperature Dependences of the Raman-Active Phonons in SnO2

P. S. Peercy and B. Morosin
Phys. Rev. B 7, 2779 – Published 15 March 1973
PDFExport Citation

Abstract

The temperature (10-500 °K) and pressure (0-4 kbar) dependences of the four Raman-active phonons B1g, Eg, A1g, and B2g as well as thermal expansion (93-700 °K) and isothermal compressibility (0-3 kbar) in SnO2 were measured. These measurements allowed us to determine the mode Grüneisen parameters for the Raman-active phonons and to separate the isobaric temperature dependence of each frequency into pure-volume and pure-temperature contributions. By this procedure the cubic and quartic anharmonicities responsible for the pure-temperature contributions to the mode frequencies were determined. The B1g mode in SnO2 exhibited anomalous temperature and pressure dependences in that ω(B1g) increased with temperature and decreased with pressure. The remaining modes exhibited decreases in frequency with increasing temperature and increases in frequency with increasing pressure, characteristic of ionic crystals. The results are compared with the recent results on the isomorphic compound tetragonal TiO2.

  • Received 25 September 1972

DOI:https://doi.org/10.1103/PhysRevB.7.2779

©1973 American Physical Society

Authors & Affiliations

P. S. Peercy and B. Morosin

  • Sandia Laboratories, Albuquerque, New Mexico 87115

References (Subscription Required)

Click to Expand
Issue

Vol. 7, Iss. 6 — 15 March 1973

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×