Annealing-induced evolution of boron-doped polycrystalline diamond

Gufei Zhang, Ramiz Zulkharnay, Fabian Ganss, Yujie Guo, Mohammed Alkhalifah, Limin Yang, Sen Zhang, Shengqiang Zhou, Peng Li, Yejun Li, Victor V. Moshchalkov, Jiaqi Zhu, and Paul W. May
Phys. Rev. Materials 8, 044802 – Published 12 April 2024

Abstract

Diamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600C can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.

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  • Received 8 December 2023
  • Accepted 1 April 2024

DOI:https://doi.org/10.1103/PhysRevMaterials.8.044802

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Gufei Zhang1,2,3,*, Ramiz Zulkharnay4, Fabian Ganss5, Yujie Guo6, Mohammed Alkhalifah4, Limin Yang4, Sen Zhang1,2, Shengqiang Zhou5, Peng Li7, Yejun Li8, Victor V. Moshchalkov9, Jiaqi Zhu1,2, and Paul W. May4,†

  • 1National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, 150080 Harbin, China
  • 2Zhengzhou Research Institute, Harbin Institute of Technology, 450000 Zhengzhou, China
  • 3POLIMA—Center for Polariton-Driven Light-Matter Interactions and Danish Institute for Advanced Study, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
  • 4School of Chemistry, University of Bristol, Bristol BS8 1TS, United Kingdom
  • 5Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany
  • 6Photonics Research Group, Department of Information Technology, Ghent University-IMEC, 9052 Ghent, Belgium
  • 7Department of Chemical Engineering, Shandong University of Technology, 255000 Zibo, China
  • 8Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics and School of Materials Science and Engineering, Central South University, 410083 Changsha, China
  • 9Department of Physics and Astronomy, KU Leuven, B-3001 Heverlee, Belgium

  • *sp3.zhang@gmail.com
  • paul.may@bristol.ac.uk

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Vol. 8, Iss. 4 — April 2024

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