The electronic structure of Mott and charge-transfer insulators can be tuned through charge doping to achieve a variety of fascinating physical properties, e.g., superconductivity, colossal magnetoresistance, and metal-to-insulator transitions. Strong correlations between $d$ electrons give rise to these properties but they are also the reason why they are inherently difficult to model. This holds true especially for the evolution of properties upon charge doping. Here, we hole-dope nickel oxide with potassium and elucidate the resulting structure by using a range of experimental and theoretical tools; potassium is twice as big as nickel and is expected to lead to distortions in its vicinity. Our measurements of the x-ray absorption fine structure (XAFS) show a significant distortion around the dopant and that the dopant is fully incorporated in the nickel oxide matrix. In parallel, the theoretical investigations include developing a Gaussian process for quantum Monte Carlo calculations to determine the lowest energy local structure around the potassium dopant. While the optimal structures determined from density functional theory and quantum Monte Carlo calculations agree very well, we find a large discrepancy between the experimentally determined structures and the theoretical doped structures. Further modeling indicates that the discrepancy is likely due to vacancy defects. Our work shows that potassium doping is a possible avenue to doping NiO, in spite of the size of the potassium dopant. In addition, the Gaussian process opens up a new route towards obtaining structure predictions outside of density functional theory.

• Received 28 August 2019

DOI:https://doi.org/10.1103/PhysRevMaterials.3.115003