Inversion of Magnetoresistance in Magnetic Tunnel Junctions: Effect of Pinhole Nanocontacts

Soumik Mukhopadhyay and I. Das
Phys. Rev. Lett. 96, 026601 – Published 18 January 2006

Abstract

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.

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  • Received 5 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.026601

©2006 American Physical Society

Authors & Affiliations

Soumik Mukhopadhyay and I. Das

  • ECMP Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India

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Issue

Vol. 96, Iss. 2 — 20 January 2006

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