Quantum Monte Carlo Calculations of H2 Dissociation on Si(001)

Claudia Filippi, Sorcha B. Healy, P. Kratzer, E. Pehlke, and M. Scheffler
Phys. Rev. Lett. 89, 166102 – Published 30 September 2002

Abstract

The dissociative adsorption of H2 on the Si(001) surface is theoretically investigated for several reaction pathways using quantum Monte Carlo methods. Our reaction energies and barriers are at large variance with those obtained with commonly used approximate exchange-correlation density functionals. Our results for adsorption support recent experimental findings, while, for desorption, the calculations give barriers in excess of the presently accepted experimental value, pinpointing the role of coverage effects and desorption from steps.

  • Figure
  • Received 19 April 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.166102

©2002 American Physical Society

Authors & Affiliations

Claudia Filippi1, Sorcha B. Healy2, P. Kratzer3, E. Pehlke4, and M. Scheffler3

  • 1Instituut Lorentz, Universiteit Leiden, Niels Bohrweg 2, Leiden, NL-2333 CA, The Netherlands
  • 2Physics Department, National University of Ireland, Cork, Ireland
  • 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin-Dahlem, Germany
  • 4Institut für Laser und Plasmaphysik, Universität Essen, 45117 Essen, Germany

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Issue

Vol. 89, Iss. 16 — 14 October 2002

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