Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon

G. Juška, K. Arlauskas, M. Viliūnas, and J. Kočka
Phys. Rev. Lett. 84, 4946 – Published 22 May 2000
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Abstract

The transport properties of microcrystalline silicon, namely, mobility and conductivity, are investigated by a new method, for which the simple theory as well as numerical modeling is presented. The basic idea of the new method is verified on amorphous hydrogenated silicon by comparison with the widely used time-of-flight method. Contrary to time of flight, the new method can be used even for relatively conductive materials. Preliminary results on microcrystalline silicon clearly indicate the critical role of amorphouslike tissue in transport in microcrystalline silicon.

  • Received 3 August 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.4946

©2000 American Physical Society

Authors & Affiliations

G. Juška, K. Arlauskas, and M. Viliūnas

  • Department of Solid State Electronics, Vilnius University, Sauletekio 9, III K, 2040 Vilnius, Lithuania

J. Kočka

  • Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague 6, Czech Republic

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Vol. 84, Iss. 21 — 22 May 2000

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