We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of ${\beta }^{-}$ particles emitted by the radioactive isotope ${}^{67}\mathrm{Cu}$ was monitored following room temperature implantation into Si single crystals and annealing up to 600 °C. The majority of Cu was found close to substitutional sites, however, with a significant displacement, most likely 0.50(8) Å along the $〈111〉$ directions towards the bond center position. The activation energy for the dissociation of near-substitutional Cu is estimated to be 1.8–2.2 eV.

• Received 14 July 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.1495