Abstract
B lattice positions are determined as a function of B concentration in ultrahighly doped Si(001):B layers grown by gas-source molecular beam epitaxy from . For , all B atoms reside on tetrahedrally bonded electrically active substitutional Si sites. At higher , inactive B is incorporated as B pairs located on single Si sites and oriented primarily along in-plane [100] and [010] directions. The B pairs are bonded with trigonal coordination while substitutional single B atoms are . A surface reaction path leading to inactive B incorporation is proposed.
- Received 2 February 1999
DOI:https://doi.org/10.1103/PhysRevLett.82.4464
©1999 American Physical Society