Theory of self-diffusion at and growth of Al(111)

Roland Stumpf and Matthias Scheffler
Phys. Rev. Lett. 72, 254 – Published 10 January 1994; Erratum Phys. Rev. Lett. 73, 508 (1994)
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Abstract

We studied the self-diffusion at clean, flat as well as stepped Al(111) surfaces using density-functional theory. There are two important steps on fcc(111) surfaces, typically labeled according to their {111} and {100} microfacets. We calculated the formation energies of these steps, and analyzed the diffusion perpendicular and parallel to them. We discuss the general profile of the diffusing-atom potential-energy surface and identify the role of ‘‘normal’’ hopping and exchange mechanisms of diffusion at steps. From these results the equilibrium shape of islands and the temperature dependence of the island shapes under growth conditions are predicted.

  • Received 9 August 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.254

©1994 American Physical Society

Erratum

Theory of Self-Diffusion at and Growth of A1(111)

Roland Stumpf and Matthias Scheffler
Phys. Rev. Lett. 73, 508 (1994)

Authors & Affiliations

Roland Stumpf and Matthias Scheffler

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin-Dahlem, Germany

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Vol. 72, Iss. 2 — 10 January 1994

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