Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy

R. M. Feenstra, A. J. Slavin, G. A. Held, and M. A. Lutz
Phys. Rev. Lett. 66, 3257 – Published 24 June 1991
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Abstract

The formation of disordered regions is observed on the Ga(111)c2×8 surface, at temperatures in the range 150–350 °C. The disorder occurs by the diffusion of surface adatoms in the 〈011¯〉 directions. The disordered regions form at domain boundaries, and grow continuously with temperature until the entire surface becomes disordered at 300 °C. We argue that this phase transition is an example of premelting in two dimensions, i.e., ‘‘edge melting.’’

  • Received 20 March 1991

DOI:https://doi.org/10.1103/PhysRevLett.66.3257

©1991 American Physical Society

Authors & Affiliations

R. M. Feenstra, A. J. Slavin, G. A. Held, and M. A. Lutz

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 66, Iss. 25 — 24 June 1991

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