Spontaneous resistance switching and low-frequency noise in quantum point contacts

C. Dekker, A. J. Scholten, F. Liefrink, R. Eppenga, H. van Houten, and C. T. Foxon
Phys. Rev. Lett. 66, 2148 – Published 22 April 1991
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Abstract

The kinetics of charge transport in quantum point contacts has been studied by low-frequency noise spectroscopy. Temperature and frequency (Lorentzian and 1/f) dependences of the noise spectral density are found to vary strongly from device to device, but the low-T conductance dependence universally exhibits a strong quantum size effect. Based on the direct observation in the time domain of spontaneous resistance switching, the noise is identified to be due to trapping processes which affect the local electrostatic potential. A model is presented which explains the main experimental observations.

  • Received 9 October 1990

DOI:https://doi.org/10.1103/PhysRevLett.66.2148

©1991 American Physical Society

Authors & Affiliations

C. Dekker, A. J. Scholten, and F. Liefrink

  • Faculty of Physics and Astronomy and Debye Research Institute, University of Utrecht, P.O. Box 80000, 3508 TA Utrecht, The Netherlands

R. Eppenga and H. van Houten

  • Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands

C. T. Foxon

  • Philips Research Laboratories, Redhill Surrey RH1 5HA, United Kingdom

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Issue

Vol. 66, Iss. 16 — 22 April 1991

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