Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface

Y. Enta, S. Suzuki, and S. Kono
Phys. Rev. Lett. 65, 2704 – Published 19 November 1990
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Abstract

A wide-terrace single-domain Si(001)c(4×2) surface has been obtained by cooling a wide-terrace single-domain Si(001)2×1 surface to 200–80 K. Angle-resolved ultraviolet photoelectron spectra have been measured for the Si(001)c(4×2) surface at 200–100 K and compared with those for the Si(001)2×1 surface. The electronic structure of the Si(001)c(4×2) surface appears to be explained as that expected for ‘‘antiferromagnetic’’ order of asymmetric dimers of surface Si. The electronic structure of the Si(001)2×1 surface appears to be reminiscent of the c(4×2) surface.

  • Received 1 June 1990

DOI:https://doi.org/10.1103/PhysRevLett.65.2704

©1990 American Physical Society

Authors & Affiliations

Y. Enta, S. Suzuki, and S. Kono

  • Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan

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Issue

Vol. 65, Iss. 21 — 19 November 1990

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