2.7-eV luminescence in as-manufactured high-purity silica glass

Ryoichi Tohmon, Yasushi Shimogaichi, Hiroyasu Mizuno, Yoshimichi Ohki, Kaya Nagasawa, and Yoshimasa Hama
Phys. Rev. Lett. 62, 1388 – Published 20 March 1989
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Abstract

The nature of the 2.7-eV photoluminescence in as-manufactured oxygen-deficient high-purity silica glasses is studied. Luminescence lifetime measurements and ab initio molecular-orbital calculations are consistent with the luminescence being a triplet-to-ground transition of a neutral oxygen-vacancy defect (?Si-Si?).

  • Received 3 November 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.1388

©1989 American Physical Society

Authors & Affiliations

Ryoichi Tohmon, Yasushi Shimogaichi, Hiroyasu Mizuno, and Yoshimichi Ohki

  • Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

Kaya Nagasawa

  • Department of Electrical Engineering, Sagami Institute of Technology, 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa 251, Japan

Yoshimasa Hama

  • Science and Engineering Research Laboratory, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

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Vol. 62, Iss. 12 — 20 March 1989

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