Evidence for the Fractional Quantum Hall State at ν=17

V. J. Goldman, M. Shayegan, and D. C. Tsui
Phys. Rev. Lett. 61, 881 – Published 15 August 1988
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Abstract

We report the magnetotransport measurements of a low-density, very low-disorder two-dimensional electron system realized in a GaAs/AlGaAs heterojunction. The diagonal magnetoresistance displays a structure near the filling factor ν=17 which is interpreted as evidence for a developing fractional quantum Hall state. We therefore conclude, contrary to recent theoretical and experimental work, that the Wigner crystallization does not occur in this system for ν17.

  • Received 10 June 1988

DOI:https://doi.org/10.1103/PhysRevLett.61.881

©1988 American Physical Society

Authors & Affiliations

V. J. Goldman*, M. Shayegan, and D. C. Tsui

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

  • *Present and permanent address: Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794.

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Issue

Vol. 61, Iss. 7 — 15 August 1988

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