We propose a method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structure of semiconductors. We use the Hg-Te-CdTe system as an example in which we find that the valence-band maximum of HgTe lies 0.35±0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the x-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication of the heterojunction band line-up and the electronic structures of semiconductor alloys, are discussed.

• Received 27 January 1987

DOI:https://doi.org/10.1103/PhysRevLett.58.2594